Please use this identifier to cite or link to this item:
Title: Muon and hydrogen states in II-VI semiconductor compounds. A muSR study
Authors: Weidinger, A. 
Alberto, H. V. 
Gil, J. M. 
Vilão, R. C. 
Duarte, J. Piroto 
Campos, N. Ayres de 
Issue Date: 2003
Citation: physica status solidi (c). 0:2 (2003) 711-714
Abstract: Additional hydrogen in II-VI semiconductors may occur in two different configurations, either bound to the anion in a position along the bond direction, or at an open interstitial site surrounded by four cations. The electronic character of these states is very different: the bound hydrogen forms a donor with an extended electronic wave function, whereas the interstitial hydrogen is acceptor-like and has an almost free-atom-like electron distribution. In this paper, we show in which systems the donor and in which the acceptor was found to form the ground state. Some of the structural and electronic properties of these states are also given. The information presented is derived from muSR experiments.
DOI: 10.1002/pssc.200300000
Rights: openAccess
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais

Files in This Item:
File Description SizeFormat
obra.pdf65.23 kBAdobe PDFView/Open
Show full item record

Page view(s) 50

checked on Aug 11, 2022

Download(s) 20

checked on Aug 11, 2022

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.