Please use this identifier to cite or link to this item: https://hdl.handle.net/10316/114675
DC FieldValueLanguage
dc.contributor.authorAlberto, H. V.-
dc.contributor.authorVilão, R. C.-
dc.contributor.authorRibeiro, E. F. M.-
dc.contributor.authorGil, J. M.-
dc.contributor.authorCurado, M. A.-
dc.contributor.authorTeixeira, J. P.-
dc.contributor.authorFernandes, P. A.-
dc.contributor.authorCunha, J. M. V.-
dc.contributor.authorSalomé, P. M. P.-
dc.contributor.authorEdoff, M.-
dc.contributor.authorMartins, M. I.-
dc.contributor.authorProkscha, T.-
dc.contributor.authorSalman, Z.-
dc.contributor.authorWeidinger, A.-
dc.date.accessioned2024-04-04T12:03:02Z-
dc.date.available2024-04-04T12:03:02Z-
dc.date.issued2023-
dc.identifier.issn1742-6588-
dc.identifier.issn1742-6596-
dc.identifier.urihttps://hdl.handle.net/10316/114675-
dc.description.abstractThe slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identi ed and the passivation of the defects by bu er layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor e ect. In the present contribution, speci c aspects of the low-energy muon technique in connection with this research are discussed.pt
dc.language.isoengpt
dc.publisherInstitute of Physicspt
dc.relationThis work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and by national funds from FCT - Funda c~ao para a Ci^encia e Tecnologia, I. P. (Portugal) under projects PTDC/FIS-MAC/29696/2017, PD/BD/142780/2018, UID/04564/2020, UID/04730/2020, UID/50025/2020pt
dc.rightsopenAccesspt
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/pt
dc.titleLow energy muon study of the p-n interface in chalcopyrite solar cellspt
dc.typearticlept
degois.publication.firstPage012047pt
degois.publication.issue1pt
degois.publication.titleJournal of Physics: Conference Seriespt
dc.peerreviewedyespt
dc.identifier.doi10.1088/1742-6596/2462/1/012047-
degois.publication.volume2462pt
dc.date.embargo2023-01-01*
uc.date.periodoEmbargo0pt
item.grantfulltextopen-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairetypearticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextCom Texto completo-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.author.orcid0000-0002-0139-1993-
crisitem.author.orcid0000-0003-2750-8923-
crisitem.author.orcid0000-0002-5953-8249-
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais
I&D CFis - Artigos em Revistas Internacionais
Files in This Item:
File Description SizeFormat
Low-energy-muon-study-of-the-pn-interface-in-chalcopyrite-solar-cellsJournal-of-Physics-Conference-Series.pdf1.32 MBAdobe PDFView/Open
Show simple item record

Page view(s)

33
checked on May 15, 2024

Download(s)

9
checked on May 15, 2024

Google ScholarTM

Check

Altmetric

Altmetric


This item is licensed under a Creative Commons License Creative Commons