Please use this identifier to cite or link to this item: http://hdl.handle.net/10316/92546
DC FieldValueLanguage
dc.contributor.advisorVilão, Rui César do Espírito Santo-
dc.contributor.authorMartins, Maria Inês Mendes-
dc.date.accessioned2021-01-14T23:05:27Z-
dc.date.available2021-01-14T23:05:27Z-
dc.date.issued2020-07-24-
dc.date.submitted2021-01-14-
dc.identifier.urihttp://hdl.handle.net/10316/92546-
dc.description.abstractMuon spin spectroscopy (muSR) has been used to investigate the interface of the solar cell absorber semiconductor copper indium gallium diselenide (CIGS) with a silicon dioxide (SiO2) dielectric layer. Dielectric materials like SiO2 have promising applications on the passivation of interface defects in CIGS thin-film solar cells. mu\$R studies of CIGS show a region where the muon signal is affected. This can be due to a sensitivity of the muon to a defect surface layer or the charge in the space charge region. To investigate this effect, we use systems where the fixed charge at the interface can be controlled. The experimental work was performed at the Low-Energy Muons (LEM) Laboratory at Paul Scherrer Institute (PSI), in Switzerland. The measurements were conducted for muon implantation energies between 3 to 22 keV, thus controlling the average implantation depth of the muons within the sample. An existing depth-resolved analysis tool for muons was further developed in order to improve its performance, allowing simultaneous fits of the experimental data, and becoming more user-friendly. The improved tool was used to acquire a depth dependent model of the interface properties. A description of diamagnetic fraction and spin relaxation depth variation was obtained for all the samples. This asserted the functionality of the depth-resolved analysis tool, while providing useful information for this study.The depth dependence results point to the occurrence of intermixing close to the interface, inside the SiO2 layer. However, no reduction of the CIGS surface defect layer was observed due to the effect of SiO2. Differences at the positive and negative interfaces were observed, likely due to different deposition conditions or to the muon sensitivity to the charge.eng
dc.description.sponsorshipOutro - Fundação para a Ciência e a Tecnologia PTDC/FISMAC/29696/2017-
dc.language.isoeng-
dc.rightsopenAccess-
dc.subjectEspetroscopia de Muão Positivopor
dc.subjectCIGSpor
dc.subjectCélulas solares de filmes finospor
dc.subjectdefeitos de interfacepor
dc.subjectdielétricospor
dc.subjectMuon Spin Spectroscopyeng
dc.subjectCIGSeng
dc.subjectthin-film solar cellseng
dc.subjectinterface defectseng
dc.subjectdielectricseng
dc.titleInnovative dielectric materials for passivation of interfaces in solar cells: a muSR studyeng
dc.title.alternativeMateriais dielétricos inovadores para passivação de interfaces em células solares: um estudo por muSRpor
dc.typemasterThesis-
degois.publication.locationDF-
degois.publication.titleInnovative dielectric materials for passivation of interfaces in solar cells: a muSR studyeng
dc.peerreviewedyes-
dc.identifier.tid202520366-
thesis.degree.level1-
uc.degree.grantorUnitFaculdade de Ciências e Tecnologia - Departamento de Física-
uc.degree.grantorID0500-
uc.contributor.authorMartins, Maria Inês Mendes::0000-0002-2506-505X-
uc.degree.classification19-
uc.degree.elementojuriSALOMÉ, PEDRO MANUEL PARRACHO-
uc.degree.elementojuriVilão, Rui César do Espírito Santo-
uc.contributor.advisorVilão, Rui César do Espírito Santo-
item.fulltextCom Texto completo-
item.grantfulltextopen-
item.languageiso639-1en-
crisitem.advisor.researchunitCFisUC – Center for Physics of the University of Coimbra-
crisitem.advisor.researchunitCFisUC – Center for Physics of the University of Coimbra-
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